Interband Raman scattering in size-quantized semiconductor films

Abstract

The interband Raman scattering in size-quantized semiconductor films is studied theoretically. The process involves an interband electronic transition and an intraband transition between subbands. Calculations show that the spectrum of the scattered radiation exhibits striking resonances for frequencies equal to the frequencies of the intersubband transitions. The magnitude of the scattering efficiency associated with the resonance suggests that it may be possible to use interband Raman scattering to measure the energy spectrum of size-quantized semiconductor films.