Abstract
We report on further investigations on the photoluminescence (PL) and electroluminescence (EL) properties of strained Si/Ge superlattices. The band-gap PL from strain-adjusted Sim Gen (m=9, 6, 3; n=6, 4, 2) superlattices has been studied as a function of applied external hydrostatic pressure. The superlattices used in these measurements are of improved quality in terms of dislocation density due to a thick, step-graded Si1-x Gex buffer layer, providing the strain symmetry. The no-phonon (NP) lines shift in all superlattices linearly to lower energies with applied hydrostatic pressure. The stress dependence was modeled using an approach based on deformation potentials and effective-mass theory. Furthermore, we report on strong EL from a novel structure consisting of only a 2-monolayer-thick Ge-layer embedded in bulk Si.
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