Abstract
We have measured the interband optical absorption of a free-standing sample of Ga0.96In0.04As0.99N0.01 in a wide energy range from 1 to 2.5 eV. We found that the fundamental absorption edge is shifted by 150 meV towards lower energies, and the absorption coefficient measured at higher energies exhibits substantial reduction comparing to that of GaAs. By removing the GaAs substrate, we were able to get an experimental insight into the interband optical transitions and the density of state in this material. The changes can be understood within the band anticrossing model predicting the conduction band splitting. New absorption edges associated with optical transitions from the spin-orbit split off band to the lower conduction subband (1.55 eV) and from the top of the valence band to the upper subband (1.85 eV) are observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
