Abstract
A certain kind of electron Raman scattering in semiconductors, which the authors have called 'interband-intraband electron Raman scattering' (IIERS), is discussed in detail. The IIERS process differential cross section is calculated without particular assumptions on the semiconductor band structure, allowing the study of a wide class of materials. Concrete applications are made to the cases of parabolic and Kane band structure models. The differential cross section of the IIERS is also studied for the critical points in the three-dimensional case. Special emphasis is made on the spectral frequency dependence for different polarisation of the incident and emitted light. Scattered light in the IIERS is displaced towards the low-frequency region providing spectral structure far from the incident light frequency.
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