Abstract
Extended balance equations accounting for the conduction–valence interband impact ionization (II) process in semiconductor heterostructures are presented. The II effect and terahertz (THz) field influence on electron transport in InAs/AlSb heterostructures is studied. It is shown that the II process usually results in a decrease in electron velocity and temperature when compared to the case without the II process. Qualitative agreement is obtained between the calculated electron–hole generation rates and available experimental data. Comparison with published experimental data on THz-driven heterostructures is also made.
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