Abstract
On the example of the quantized film InSb in the frame of two-band Kane model, the influence of an external uniform electric field on the interband optical absorption in a narrow-gap semiconductor quantum well is theoretically studied. Absorption coefficients of interband electrooptical transitions in the well for different intervals of values of the external field are analytically calculated. We also consider the effect of nonparabolicity law of the dispersion of light charge carriers in the narrow-band film on the threshold frequency of the interband transitions and the frequency dependence of the electroabsorption coefficient.
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