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Abstract
The interband and intraband photocurrent properties of InAs/InAlAs/InP nanostructureshave been studied. The doping effect on the photoluminescence properties of the quantumdots and the anisotropy of the quantum wire interband photocurrent properties arepresented and discussed. With the help of interband excitation, an intraband photocurrentsignal of the InAs nanostructures is observed. With the increase of the interband excitationpower, the intraband photocurrent signal first increases and then decreases, which can beexplained by the variance of the ground state occupation of the InAs nanostructures andthe change of the mobility and lifetime of the electrons. The temperature dependence of theintraband photocurrent signal of the InAs nanostructures is also investigated.
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