Abstract

A study of the role of deep traps in the specific features of the thermoluminescence (TL) of anion-defect α-Al2O3 single crystals is reported. The existence of deep traps is proven by direct observation of the associated TL peaks. Experimental support for the effect of deep-trap filling on the main characteristics of the main TL peak at 450 K is presented. A model involving trap interaction is proposed, which differs radically from the others described in the literature by taking into account the temperature dependence of the carrier capture probability by deep traps. This model was used to calculate the dependences on heating rate and deep-trap filling of the main parameters of the main TL peak for the crystals under study (TL yield, glow-curve shape, and sensitivity to the stored light sum), which were found to be close to those observed experimentally.

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