Interactions of SiH radicals with silicon surfaces: An atomic-scale simulation study

Abstract

A comprehensive study is presented of the interactions of SiH radicals originating in silane containing plasmas with crystalline and amorphous silicon surfaces based on a detailed atomic-scale analysis. The hydrogen concentration on the surface is established to be the main factor that controls both the surface reaction mechanism and the reaction probability; other important factors include the location of impingement of the radical on the surface, as well as the molecular orientation of the radical with respect to the surface. On the ordered crystalline surfaces, the radical reacts in such a way as to maximize the number of Si–Si bonds it can form even if such bond formation requires dissociation of the radical and introduction of defects in the crystal structure. The radical is established to be fully reactive with the pristine Si(001)-(2×1) surface. This chemical reactivity is reduced significantly for the corresponding H-terminated surface with a hydrogen coverage of one monolayer. SiH is found to be highly reactive with surfaces of hydrogenated amorphous silicon films, independent of radical orientation and the location of impingement. Our simulations predict an average reaction probability of 95% for SiH with a-Si:H film surfaces, which is in excellent agreement with experimental data.