Abstract
We evaluate the microstructural and electrical stability of Pt thin films with Ti or Ta as the adhesion layer after furnace annealing and rapid thermal annealing up to 750°C in three different environments. Test devices were made with 100 nm of Pt with a 10-nm adhesion layer. After annealing, the resistance anomalously increased for samples annealed in ultrahigh purity N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (UHP, 99.999%), while the resistance decreased, as expected, for samples annealed in 99.95% N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> or air. The Ta/Pt film stack shows better microstructural and electrical stability compared with Ti/Pt. X-ray photoelectron spectroscopy (XPS) data indicate that diffusion of the Ti and Ta adhesion layers through the Pt film occurs in samples annealed in UHP N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , which is responsible for the remarkable increase of resistance. For samples annealed in air, the oxidation of Ti/Ta suppresses the diffusion process and expected grain growth occurs in the Pt, thus decreasing the resistance. Furthermore, XPS elemental mapping and atomic force microscope imaging shed light on void formation/dewetting seen under certain conditions.
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