Abstract

We present transport measurements in quantum wires, where the electronic system separates into two rows in the weakly‐confined regime, a result of Coulomb repulsion overcoming the confining potential. This transport regime is marked by a jump in conductance from zero to 4e2/h. In wide split‐gate devices this double row was seen to be coupled, leading to the creation of bonding and antibonding states. Using back‐gated devices we tune the carrier density and show a density‐driven transition from single‐ to double‐row transport in the weak confinement regime.

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