Abstract
We have investigated the temperature dependence of photoluminescence (PL) emission from sequentially grown Ga 0.8 In 0.2 As and Ga 0.8 In 0.2 N 0.015 As 0.985 quantum wells between 2 K and room temperature. A significant reduction in the temperature dependence of the GaInNAs bandgap compared to nitrogen-free GaInAs is observed. The results are analysed using the band-anticrossing model, which accurately predicts the temperature dependence of the GaInNAs energy gap from the behaviour of the GaInAs energy gap. We also compare the band-anticrossing interaction parameter C NM used to fit our data with other published values for GaNAs and GaInNAs. The results suggest that C NM may not be independent of indium fraction.
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