Abstract
Oxidation of tantalum in atomic (O( 3P)) and diatomic oxygen has been investigated in the temperature range 773–1573 K at an oxygen pressure in the range 9 × 10 −3−7×10 −2 Pa. When the dissolution of oxygen in tantalum takes place, the absorption probability of atoms is considerably higher than that of molecules (14-fold higher at 1073 K). The Ta 2O 5 film growth rate is apparently determined by the reaction of chemisorbed oxygen atoms with tantalum according to a Langmuir-Hinshelwood mechanism and, in the case of diatomic oxygen, is proportional to the square root of the oxygen pressure.
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