Abstract
AbstractA procedure is developed of constructing an effective Hamiltonian, which makes it possible to reduce the nonstationary problem of interaction between a semiconductor and a strong resonance electromagnetic field to a corresponding problem of equilibrium statistical mechanics. Criteria are obtained when the proposed approach is valid. A corresponding effective Hamiltonian has been found taking into account the electron and hole acceleration by the field as well as different relaxation processes, which permits the investigation of both, the energy spectrum of a semiconductor in a strong field and its thermodynamical properties.
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