Abstract
The coupling between plasmons and polar phonons in a degenerate semiconductor is studied starting from an electron-phonon Hamiltonian which is valid in the long-wavelength limit. A truncated form of the Hamiltonian proves to be a good approximation near the crossover point of the uncoupled modes; and expressions for the phonon strengths and the sum rules are very simply derived from it. Plasmon damping is introduced phenomenologically and its effect on the behavior of the coupled modes is investigated. Model calculations of the effect of damping on the dispersion curves and reflectivity are made for the case of the degenerate semiconductor GaSb.
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