Abstract
Using nanosecond pulse techniques, we have studied the direct emission and absorption of phonons by the same two-dimensional electron gas (2DEG) in a GaAs/AlGaAs modulation-doped field effect transistor structure (MODFET) [1]. Pulsed emission of phonons from a heterojunction has been observed by Chin et al [2], and by Hawker et al [3], and absorption by Eisenstein et al [4]. In a MODFET, the additional feature of a Schottky gate allows the carrier concentration and hence the Fermi energy to be varied. It also enables the 2DEG contact resistance to be determined independently during a run at helium temperatures, essential for quantitative analysis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
