Abstract
We have studied the reflectivity spectra of doped GaAs nanowhiskers (NWs) with various morphologies, which were grown by molecular-beam epitaxy. It is established that the character of the reflectivity spectra of NWs is determined by the shape of nanocrystals. NWs with droplike and pointlike vertices differently interact with electromagnetic radiation. Laser radiation produces a spectraly selective action on the NW array, which leads to a change in the NW height and induces “caking” of their vertices, thus modifying the reflectivity of the sample. This phenomenon can be used for the creation of local microstructures with preset characteristics in large NW arrays.
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