Abstract
The spectrum of defects produced by 5 MeV electron irradiation in oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the room-temperature irradiation creates a large amount of CuPL centers (complexes including one substitutional and three interstitial Cu atoms). The analysis shows that this process is govern by formation of the substitutional copper atoms due to the direct reaction between irradiation-induced vacancies and mobile Cui species. This reaction consumes nearly all irradiation-induced vacancies and affects strongly the standard spectrum of radiation defects.
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