Abstract

Groove, as a special structure at the front of solid–liquid (S/L) interface, takes a great influence on the distribution of impurities for silicon. In this work, the interaction between grooves and impurities was studied, and the evolution model of groove was proposed. It has been found that the crystal growth rate and the impurity content in the groove determine the evolution behavior of the groove. Correspondingly, the migration behavior of impurities in groove with solidification was studied and the mathematical model was proposed to describe the anomalous enrichment phenomenon. This work is helpful to understand the distribution behavior of impurities in micro-zone such as groove and make a theoretical foundation for the deep removal of impurities.

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