Abstract
The depth distribution of impurities and defects at high-energy ion implantation is studied experimentally and with the help of calculations based on transport equations. The doping profile after implantation of silicon with boron ions with an energy of 92 MeV is determined by measuring the layer resistance, and the profiles of radiation defects are determined by the measurements of photoluminescence yield and with the help of optical microscopy. The theoretical calculations correctly forecast mean ion ranges, but the form of experimental doping profiles is distorted by channeling. The observed distribution of defects over the projected range cannot be explained by the distribution of recoil atoms immediately after the cascade passage.
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