Abstract
It is found that the phonon flux generated by an external sourceinduces a change of the luminescence bandshape of an ultrathinquantum well CdTe/ZnTe excited quasi-resonantly by a He-Nelaser. The effect of nonequilibrium phonons manifests even atsmall lasing power and large distance between the phonongeneration zone and the quasi-resonant luminescence excitationzone. It is assumed that the phonon flux induces the tunneltransitions between localized exciton states; these transitionsare accompanied by stimulated phonon emission.This paper was presented at the 3rd RussianWorkshop on Nanophotonics, Nizhnii Novgorod, Russia, 26-29March 2001.
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