Abstract
We have studied SIMOX buried oxide samples implanted with D + (10 14–10 15 cm −2) or annealed in D 2 (300–500 kPa at 1073 K). Thermal desorption spectrometry (TDS) performed on these samples after removal of the top Si layer shows two main peaks related to release of deuterium from Si–D and Si–OD defects. The first peak is dominant in implanted samples and the second in deuterium-annealed samples. In TDS experiments on samples with top layer the deuterium release is limited by diffusion in SiO 2, D 2-cracking at the Si/SiO 2 interface and permeation through the top Si layer. In these samples the D 2 signal is related to release through lateral surfaces, whereas the HD signal is produced by release through the top Si layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
