Abstract
The interaction of cobalt and thermally grown field oxide (5000 AA) during low temperature furnace annealing (600-800 degrees C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters form in the silicon substrate when the annealing temperature exceeds 700 degrees C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600 degrees C. >
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