Abstract
ABSTRACTHREM,TEM, and EDX were employed to study the cross sections of Au/Zn/Au and Au/Te/Au contacts to [001]-oriented GaAs substrates. The metal contacts fabricated by sequential vapor deposition were capped with an A12O3 thin film to form a closed system when subjected to a 420°C anneal for 3 min. For an as-deposited Au/Zn/Au/GaAs specimen, Zn was found to react with Au to form ordered phases of Au3Zn. These phases were found to be stable upon annealing. The interface between the annealed metallization and GaAs exhibited the same degree of uniformity and planarity as that of the as-deposited specimen. For a Au/Te/Au/GaAs specimen, annealing resulted in epitaxial growth of Ga2Te3 grains, forming a basically flat interface with GaAs, while Au single-crystal grains were found to protrude rather extensively into GaAs to form a facetted interface with the substrate.
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