Abstract
AbstractA new theory of the spin‐lattice interaction mechanism is developed for localized spins in semiconductors. In this mechanism, the coupling with phonons results from exchange scattering on a localized spin of the electron‐hole pairs accompanying the phonons. The process leads to a relaxation flip of the localized spin, provided the intermediate‐state carrier spins are flipped by spinorbit interaction. A detailed analysis of the mechanism is carried out in the approximation of the isotropic band structure of the semiconductor and the deformation electron‐phonon interactions. The experimental manifestations of the mechanism are discussed.
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