Interaction mechanism of Ge, Ti, and N in diamond prepared by high pressure and high temperature conditions

Abstract

In this paper, Ge-doped large single crystal diamond was synthesized under high pressure and high temperature (HPHT) conditions in NiMnCo-C and NiMnCo-Ti-C systems. The effects of Ge additives on the diamond morphology, nitrogen impurity content, and internal inclusions were investigated, and the interaction mechanism among germanium (Ge), nitrogen (N), and titanium (Ti) during the diamond growth process was discussed. The results show that the number of inclusions in diamond increase with increases in Ge addition in both systems. The N content of diamond grown in NiMnCo-C systems decreases with increases in Ge addition. However, Ge can more easily be doped into the diamond in a NiMnCo-Ti-C growth system. The experimental results show that the N can inhibit the amount of Ge entering the diamond lattice under HPHT conditions. When Ti was introduced into the system, it effectively removed N by combining with it, such that more Ge atoms could enter the diamond lattice.