Abstract
A phosphosilicate glass (PSG) passivation film (4 weight percent phosphorus) was deposited onto complementary MOS (CMOS) FET's by chemical vapor deposition. After exposure to water vapor (85°C/85% RH), the CMOS FET's were tested at a high temperature bias of 150°C. It was found that a threshold voltage shift or transconductance (GM) degradation occurs pronouncedly in p‐channel FET's under gate negative‐bias stress, compared with in n‐channel FET's under gate positive stress. Furthermore, it was found that there is a critical exposure time at 85°C/85% RH to enhance the shift and degradation. Finally, it was confirmed that the shift and degradation characteristics observed in this study are similar to instabilities due to gate negative bias in hydrogen ambient atmosphere.
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