Abstract
Phosphosilicate glass (PSG) films were deposited onto silicon substrates by the oxidation of and at 350°. Densities, phosphorus oxide concentrations, and infrared absorption spectra were measured for the evaluation of the film structure. It was found that nearly all the phosphorus oxide in a PSG film containing more than about 8 mole per cent was dissolved into water by exposing to saturated water vapor at 120°C. By heating at elevated temperatures, the phosphorus oxide concentration value at which phosphorus oxide began to dissolve shifted toward the higher concentration region. Water absorption in the PSG film also can be lessened considerably by heat‐treatment.
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