Abstract
AbstractThe interaction between EL5 and EL6 in the n-type bulk GaAs have been observed by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Each CCVTS spectrum of EL5 and EL6 was broader than a theoretical one expected for a single level, and was found to be consistently interpreted by two main trap components. With the increase of the filling pulse duration in a wide range, one component of EL6 decreased to about 50 % of its initial value, while one component of EL5 increased and saturated. This variation in peak heights could be reversed by controlling electron occupation fractions of EL5 and EL6 by application of two adjacent filling pulses. Such interaction between both levels was commonly observed in n-type bulk GaAs independent of carrier density.
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