Abstract
AbstractThe correlation between antiferromagnetic and ferroelectric domain structures in multiferroics has been studied. The role of magnetoelectric interactions in the formation of antiferromagnetic domain structure has been analysed. It has been shown that the major physical mechanism binding antiferromagnetic domains to ferroelectric ones is the inhomogeneous flexomagnetoelectric interaction of the Pz [(l ∇)lz – lz(∇l)] type. The dependences illustrating the rearrangement of antiferromagnetic domain patterns together with changes of the ferroelectric domain thickness have been analyzed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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