Abstract
We report the observation of light hole intersubband absorption in both p-doped and photoexcited undoped tensile strained In x Ga 1− x As/InP ( x≃0.35) quantum-well structures. The absorption is polarized along the growth direction and is in agreement with calculations which show that the strain causes the light hole level to be first occupied upon p-doping or photoexcitation. Both impurity bound and free holes transitions are identified.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.