Abstract
We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al0.3Ga0.7As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to the case of interrupted MBE growth. Migration of excitons towards lower-lying energy states induced by local potential fluctuations and/or progressive localisation has been revealed and the transition rate between quantum well regions 24 to 25 monolayers thick has been derived to be 290 ps−1.
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