Abstract
Situations where it is desirable to control a chemical vapor deposition reactor to a spatially non-uniform film profile are presented in the context of a planetary reactor system for SiC CVD and a highly controllable reactor system designed for single-wafer combinatorial CVD processing. We focus on reactor designs and operation methods that enable deposition of spatially graded films for combinatorial studies, and on identifying and driving planetary CVD systems to a specific spatially non-uniform deposition rate profile. Known as a “Nearest Uniformity Producing Profile” (NUPP), these target profiles lead to a natural criterion for film uniformity control under wafer rotation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
