Abstract
An intensity spatial filter has been devised and used for the semiautomatic photoelectric detection of 2.5-µ defects in 5-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> photolithography masks for silicon integrated circuits. The filter is based on a simple geometric approximation to the form factor or envelope function for the intensity in the Fourier-transform plane, and permits small-area diffraction-limited illumination. This approach complements the Watkins' method.
Published Version
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