Abstract
In this paper, the intensity noise characteristics in the three regions of InGaAs QD structure is studied here. The four-level structure-dependent model introduced in this work enable us to study relaxation, recombination and emission processes in the QD region. Carrier recombination outside the dot (inside the quantum-well region), which is impossible to study with other models, is studied here. In this paper, it is shown that noise can be split into five sources. Phonon bottleneck effect is shown to increase the noise.
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