Abstract
AbstractTemperature‐dependent electrical characterization of a highly structured TiO2/In(OH)x Sy /Pb(OH)x Sy /PEDOT:PSS eta solar cell has been carried out. The transport mechanism in this type of solar cell has been investigated. A schematic energy band diagram which explains the photoelectrical properties of the device has been proposed. The solar cell has been characterized in the temperature range 200–320 K at illumination intensities between 0.05 mW/cm2 and 100 mW/cm2. The diode ideality factor A under illumination has been found to vary between 1.2 and 1.6, whereas in the dark 6.9 ≤ A ≤ 10.1. The device has been found to undergo a thermally activated recombination under illumination, while tunnelling enhanced recombination has been established to dominate the current in the dark. The solar cell efficiency shows a logarithmic dependence on illumination in the whole temperature range investigated, achieving its maximum at an illumination of ∼45 mW/cm2. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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