Abstract
Light emitting capacitors (LECs) based on silicon-rich oxide (SRO) were fabricated and its electroluminescent (EL) characteristics studied. Thin SRO films with R0=30 were deposited by low pressure chemical vapor deposition and submitted to thermal treatment at 1100 °C for 180 min. Photoluminescence was observed in the SRO films and intense visible EL was obtained from fabricated LECs when stimulated with direct current. Strong intensity, naked eye visible, full area EL was obtained after the application of an electrical treatment. The EL was attributed to the presence of Si related defects and full area emission obtained was due to the optimization of carrier injection through the material by the annulations of preferential conductive paths.
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