Intense Ultraviolet-Blue Photoluminescence from SiO2 Embedded Ge Nanocrystals Prepared by Different Techniques

Abstract

We have made systematic studies on the ultraviolet-blue photoluminescence (PL) from Ge nanocrystals (NCs) grown embedded in SiO2 matrix. Embedded Ge NCs are grown by two different methods, namely, radio-frequency magnetron sputtering (SPT) and ion implantation (IMP). For comparison, Ar implanted SiO2 layer was processed similarly and studied to isolate the contribution of Ge atoms in the observed PL. X-ray diffraction, optical Raman and low frequency Raman scattering studies confirm the presence of Ge NCs in samples prepared by SPT and IMP methods, and Si nanoclusters in Ar implanted sample. Room temperature PL studies with 325 nm excitation show very strong UV-blue emission bands in the range 342-420 nm, and PL studies with 246 nm excitation show two strong UV emission bands at approximately 285 nm and approximately 393 nm in implanted samples. Deconvolution of UV-blue bands show that most of the emission peaks are not unique to the presence of Ge in the samples. Time resolved PL studies in the blue wavelength region show a fast decay dynamics (time constant of approximately 1.0 ns), irrespective of the NC size. PL excitation spectroscopy measurements show a large Stoke's shift for the UV emission bands. Our results indicate that contrary to the literature reports, the approximately 400 nm PL emission is band is not unique to the presence of Ge in the SiO2 matrix and it is likely to originate from a defective NC/SiO2 interface, irrespective of the species of NCs. Origin of various UV emission bands is discussed in the light of the experimental findings and literature reports.