Abstract
The doping of rare earth elements revolutionized applications of optoelectronic devices. Europium (Eu) ions acting as activators can provide the fundamental effect on luminescence of host materials. We investigate photoluminescence, lattice damage formation of Eu-implanted potassium titanyl phosphate (KTiOPO4) crystals using 400-keV Eu ions with a fluence of 5 × 1015 ions / cm2 at room temperature. Effective doping is achieved in the depth range of about 50 to 200 nm from the surface of KTiOPO4 crystal, and the luminescent activity of Eu ions is inhibited due to significant implantation damage. However, the samples showed intense luminescence emission at room temperature through the lattice recovery after annealing at 600°C and 700°C. The lattice damage of as-implanted and annealed samples was investigated by Rutherford backscattering spectrometry in channeling configuration. Furthermore, the relative strain depth curves of Eu implanted KTiOPO4 samples at different annealing temperatures were studied using the high resolution x-ray diffraction and Raman spectra. The present research reveals that Eu implanted KTiOPO4 samples have great prospects in the field of optical applications and waveguide quantum reservoirs.
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