Abstract
ITO/Y₂O₃/Ag devices were fabricated using Y₂O₃ films as insulator. Four intense and sharp lines with half-peak width of 4 nm were observed for the 293.78 nm InI, 316.10 nm InI, 444.82 nm InII and 403.07 nm InIII transitions. Luminescence mechanism was illustrated by cross-section of the devices based on the analysis of surface morphology. Under the action of strong electric field, the loss of K-shell electrons led to the occurrence of characteristic radiation of indium ions. In addition, the device with turn-on voltage of 10V demonstrates typical I-V diode characteristics. Moreover, Y₂O₃/In₂O₃ multiple films as the insulation layer instead of single Y₂O₃ films was found to improve the device performance with excellent CIE (x, y) coordinates (0.16, 0.03).
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