Abstract
Multi-functionalization and intellectualization are the main goal for the development of various excellent device. Resistive-switching memristor is an emerging artificial intelligence device. Combining resistive switching with electrowetting-on-dielectric (EWOD) is a pioneering idea to fulfill the multifunctional and intelligent resistive-switching EWOD device. In the paper, Fe doped ZnO memristors have been successfully prepared by a simple hydrothermal method, and exhibit reversible electronic resistive switching behavior, which is mainly attributed to the electron trapping and detrapping from the introduced oxygen vacancies by Fe doping. The surface structure of hierarchical dual-layer nanorod array endows the prepared ZnO memristors with reversible EWOD response of low energy consumption, which enables the device to satisfy the development of excellent EWOD device. Through the in-depth study, the stable high and low resistive states of prepared Fe doped ZnO memristors have distinct surface wetting properties, and the liquid droplet on the memristors can be intelligently controlled, and realize the resistive-switching EWOD intelligent device. The work gives a new way to the development of excellent artificial intelligence liquid switch and devices.
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