Abstract

An innovative design for intelligent Chemical Mechanical Polishing (CMP) system is proposed and verified by experiments in this report. On-line measurement and real-time feedback are integrated to eliminate the shortcomings of traditional approaches, e.g., the batch-to-batch discrepancy of required polishing time, over consumption of chemical slurry, and non-uniformity across the wafer. The major advantage of the proposed method is that the finish of local surface roughness can be consistent, no matter where the inner-ring region or outer-ring region is concerned. Secondly, it is able to eliminate the Edge effect. Conventionally, the interfacial induced stress near the wafer edge is generally much higher than that near the wafer center. At last, by using the proposed intelligent chemical mechanical polishing strategy, the cost of the entire machining cycle can be much reduced while the quality of the finished goods certainly upgraded. Keywords—Chemical Mechanical Polishing, Active Magnetic Actuator, On-Line Measurement.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call