Integration of wavelength signal divider and infrared photodetectors based on the plasma dispersion effect in SiGe/Si

Abstract

Based on the plasma dispersion effect, a single-mode SiGe wavelength signal divider (WSD) integrated with infrared photodetectors for optical communication at the wavelengths of 1.3 and 1.55 μm is proposed and fabricated by molecular beam epitaxy. The device performances are measured. The crosstalks of the WSD at a forward modulation bias of 1.2 V are −25 and −18 dB at 1.3 and 1.55 μm, respectively. The insertion losses are 2.01 and 2.64 dB for 1.3 and 1.55 μm, respectively. At −5 V reverse bias, the dark currents of the detectors at the 1.3 and 1.55 μm output branches are 45 and 64 nA, respectively. Photocurrent responsivities of 0.08 and 0.07 A/W for the two detectors at the 1.3 and 1.55 μm output branches have been achieved. The quantum efficiencies of the whole WSD and detector integration system are estimated to be about 19% and 18.2% for the 1.3 and 1.55 μm output branches, respectively.