Abstract
We present the integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures. Both n- (perylene) and p-type (thiophene) silk-based OFETs are demonstrated. The measured electrical characteristics are in agreement with high-efficiency standard organic transistors, namely charge mobility of the order of 10 −2 cm 2/V s and on/off ratio of 10 4. The silk-based optoelectronic element is an advanced unipolar n-type OLET that yields a light emission of 100 nW.
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