Integration of Silicon-Carbide Schottky Diodes with High-Frequency Transformer

Abstract

Integration of silicon-carbide (SiC) Schottky diodes into a high-frequency (HF) transformer is introduced. SiC Schottky diodes were integrated into a tokamak-like prototype HF transformer. The modular-based unique structure of the HF transformer can be designed and optimised for integration with various SiC devices. The size of a power converter can be shrunk by using the proposed transformer structure integrated with SiC devices. Taking into account the space for SiC Schottky diodes, the magnetic structure of HF transformer is analysed via the three-dimensional (3-D) finite element method (FEM) simulation technique. The experimental results including the prototype HF transformer itself and SiC Schottky diodes integrated within the HF transformer are presented.