Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation Process

N Breil,J Ratajcak,E Dubois,G Larrieu,A Halimaoui,A Laszcz,T Skotnicki,A Pouydebasque

doi:10.1109/led.2007.914090

Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation Process

N Breil, J Ratajcak + Show 6 more

https://doi.org/10.1109/led.2007.914090

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Journal: IEEE Electron Device Letters	Publication Date: Feb 1, 2008
Citations: 14

Affiliation: STMicroelectronics (France), Institut de Microélectronique, Electromagnétisme et Photonique, Institute of Electron Technology, CEA LIST, Atomic Energy and Alternative Energies Commission

#Sulfuric Peroxide Mixture #Silicidation Annealing + Show 8 more

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Abstract

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction with silicon or standing on insulating layers can be transformed into the PtGe2 phase. The solubility of this phase in a sulfuric peroxide mixture (SPM) without altering PtSi is demonstrated. The suitability and scalability of the proposed integration scheme is shown through the successful integration and characterization of PtSi source/drain contacts in p-type MOSFETs.

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