Integration of (Poly‐Si/Air)n Distributed Bragg Reflectors in a 150 mm Bulk Micromachined Wafer‐Level MOEMS Fabrication Process

Abstract

This paper reports the development and integration of (Poly‐Si/Air)n Distributed BRAGG Reflectors (DBR) in a MOEMS Fabry‐Pérot‐Interferometer (FPI) concept. The realized reflectors constitute a promising and resource‐efficient alternative to complex Ion‐Assisted Deposition based DBRs while maintaining their advantages. Compared to state of the art MOEMS FPIs the (Poly‐Si/Air)n DBRs can be integrated into two moveable reflector carriers based on two individually fabricated wafers which are bonded. The (Poly‐Si/Air)n DBRs are investigated as (HL) and (HL)2 reflector stacks showing a reflectance above 91% within the wavelength range of 2.8–5.7 μm. © 2023 The Authors. IEEJ Transactions on Electrical and Electronic Engineering published by Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.