Abstract
The authors report the integration of ferroelectric Pb(Zr0.52,Ti0.48)O3 (PZT) thin film on single crystal diamond by using Al2O3 as a buffer layer and SrTiO3 as a seed layer. The PZT film exhibits a remanent in-plane polarization of 2Pr=31 μC/cm2 and a coercive field of 36 kV/cm. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) capacitor using boron-doped single crystal diamond epilayer are investigated. The leakage current of the MFIS device is found to be greatly reduced as compared to that of the metal/diamond Schottky diode. Although the overall capacitance-voltage characteristic shows a trap dominated hysteresis behavior, the ferroelectric polarization induced voltage shift is demonstrated under positive gate voltage.
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