Abstract
We investigated the technology and the related physical problems for integrating organic thin-film transistor （OTFT） and polymer light-emitting diode （PLED）. The OTFT uses Pentacene as the active medium, Ta2O5 as dielectric layer, Ta as gate electrode and Au as source/drain electrodes. The structure of PLED device is ITO/PEDOT:PEO （polyethylene oxide）/P-PPV or MEH-PPV/Ba/Al. The PEDOT:PEO, P-PPV and MEH-PPV film layers were obtained by using screen printing technology. The transistors have a threshold voltage of -7.1 V and carrier mobility of 0.91 cm2/（V·s）. The luminance of the PLEDs with P-PPV and MEH-PPV emissive layer when were driven by OTFT could reach 124 and 22 cd/m2, and the maximal luminous efficiency are 12.4 and 1.1 cd/A, respectively.
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