Abstract
The integration of porous metal-organic frameworks onto the surface of materials, for use as functional devices, is currently emerging as a promising approach for gas sensing and flexible displays. However, research focused on potential applications in electronic devices is in its infancy. Here we present a facile strategy by which interpenetrated, crystalline metal-organic framework films are deposited onto conductive metal-plate anodes via in situ temperature-controlled electrochemical assembly. The nanostructure of the surface as well as the thickness and uniformity of the film are well controlled. More importantly, the resulting films exhibit enhanced dielectric properties compared to traditional inorganic or organic gate dielectrics. This study demonstrates the successful implementation of the rational design of metal-organic framework thin films on conductive supports with high-performance dielectric properties.
Highlights
The integration of porous metal-organic frameworks onto the surface of materials, for use as functional devices, is currently emerging as a promising approach for gas sensing and flexible displays
Organic polymers have been deposited onto flexible plastic substrates to address this issue; the obtained organic polymer thin films typically suffer from low dielectric constants because of weak intermolecular forces in the gate devices
We systematically investigate the relationship between the structure and the dielectric properties; the results may provide a new perspective for the design of electronic devices
Summary
The integration of porous metal-organic frameworks onto the surface of materials, for use as functional devices, is currently emerging as a promising approach for gas sensing and flexible displays. Metal-organic frameworks (MOFs) have garnered significant interest because their crystalline porous structures can be designed and functionalized through judicious choices or modifications of the metal nodes and organic linkers[12,13,14,15,16,17]. This approach provides an avenue for the rational design of a gate device on the nanoscale through electrochemical deposition of MOFs onto substrates. We systematically investigate the relationship between the structure and the dielectric properties; the results may provide a new perspective for the design of electronic devices
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